Giant valley drifts in uniaxially strained monolayerMoS2

Title of thesis : Hot Electron Injection into Uniaxially Strained Silicon

Title of thesis: Hot Electron Injection into Uniaxially Strained Silicon Hyun Soo Kim, Master of Science, 2013 Thesis directed by: Professor Ian Appelbaum Department of Physics In semiconductor spintronics, silicon attracts great attention due to its long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process...

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfo...

Valley Splitting and Spin Lifetime Enhancement in Strained Silicon Heterostructures

Semiconductor spintronics is promising because it potentially allows creating data storages and processing elements that are smaller and consume less energy than present charge-based microelectronic devices. Silicon is an ideal material for spintronic applications due to the long spin lifetime in the bulk material. However, large spin relaxation was experimentally observed in gated silicon stru...

Giant magnetocapacitance of strained ferroelectric-ferromagnetic hybrids

High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs

The effect of uniaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and highfield transport on the drive current, off-state leakage and switching delay in nano-scale, Silicon (Si) and Germanium (Ge), pMOS DGFETs is thoroughly and systematically investigated. To accurately model and capture all these complex effects, different simulation techniques, ...